Integrating perovskite oxides and layered materials towards future electronics
主讲嘉宾：王骁 新加坡南洋理工大学数理学院 & 电子电气工程学院
报告时间：2025年6月9日（周一）10：00
报告地点：物理科学与技术学院新楼多功能厅D-505
报告摘要
When artificially integrating the naturally incompatible atomic structures, crystallographic orientations and physical functionalities, the interplays at the interfaces induce unexpected functionalities, which is beneficial to future electronics in the aspect of manipulation, functionalization and utilization. However, realizing unrestricted heterogeneous integration and their electronic applications is extremely challenging, because of the technical restrictions of fabrication and the unwanted reduction of interface quality. The challenges are particularly severe in the heterogeneous integration of oxides with either other emerging materials or existing Si technologies, because of the incompatible growth dynamics and large lattice mismatch.
In this talk, I will discuss our recent exploration of functional electronic devices based on the heterogeneous integration of perovskite oxide films. First, I will provide a brief overview of the emergent functionalities in oxide heterostructures [1] and approaches to heterogeneously integrating the perovskite oxides. Then, I will discuss on experimental results of two related electronic applications based on the heterogeneously integrated structures consisting of perovskite oxide membranes and layered two-dimensional materials, namely energy-efficient transistors using SrTiO3 [2] and multifunctional devices using Sr-doped LaMnO3 [3]. A summary will be provided at the end.
References:
[1] X. Renshaw Wang, C. J. Li, W. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. Coey, E. Tsymbal, Ariando, H. Hilgenkamp, Imaging and control of ferromagnetism in LaMnO3/SrTiO3 heterostructures. Science 349, 716-719 (2015).
[2] Allen Jian Yang, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu, Jun Xu, Ting Yu, Peng Gao, Qihua Xiong, and X. Renshaw Wang, Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors. Nature Electronics 5, 233-240 (2022).
[3] Allen Jian Yang, Liang Wu, Yanran Liu, Xinyu Zhang, Kun Han, Ying Huang, Shengyao Li, Xian Jun Loh, Qiang Zhu, Rui Su, Ce-Wen Nan, X. Renshaw Wang, Multifunctional magnetic oxide-MoS2 heterostructures on silicon. Advanced Materials 35, 2302620 (2023).
报告人简介：
王骁(Wang Xiao, Renshaw)，现为新加坡南洋理工大学数学与物理学院的终身副教授。自2008年起，一直致力于低维材料电磁性能探索和其原型器件的研究工作。2012年，获得新加坡国立学大博士学位，并随后作为Rubicon Fellow加入荷兰特文特大学，开始探索强关联材料体系的磁性的扫描与调制。2014年，作为博士后研究员在美国麻省理工大学研究强关联体系表面的轨道与催化性能研究。2016年九月，作为南洋助理教授入职新加坡南洋理工大学。在SCI期刊上发表文章100余篇，包括Science一篇，Nature electronics一篇。主持多项新加坡基金。课题组主页http://renshawlab.com
