Integrating perovskite oxides and layered materials towards future electronics
Speaker: Wang Xiao, School of Mathematics and Physics & School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Report time : June 9 , 2025 ( Monday ) 10:00
Report location: Multi-function Hall D-505 , New Building, School of Physical Science and Technology
Report Summary
When artificially integrating the naturally incompatible atomic structures, crystallographic orientations and physical functionalities, the interplays at the interfaces induce unexpected functionalities, which is beneficial to future electronics in the aspect of manipulation, functionalization and utilization. However, realizing unrestricted heterogeneous integration and their electronic applications is extremely challenging, because of the technical restrictions of fabrication and the unwanted reduction of interface quality. The challenges are particularly severe in the heterogeneous integration of oxides with either other emerging materials or existing Si technologies, because of the incompatible growth dynamics and large lattice mismatch.
In this talk, I will discuss our recent exploration of functional electronic devices based on the heterogeneous integration of perovskite oxide films. First, I will provide a brief overview of the emergent functionalities in oxide heterostructures [1] and approaches to heterogeneously integrating the perovskite oxides. Then, I will discuss on experimental results of two related electronic applications based on the heterogeneously integrated structures consisting of perovskite oxide membranes and layered two-dimensional materials, namely energy-efficient transistors using SrTiO3 [2] and multifunctional devices using Sr-doped LaMnO3 [3]. A summary will be provided at the end.
References:
[1] X. Renshaw Wang, C. J. Li, W. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. Coey, E. Tsymbal, Ariando, H. Hilgenkamp, Imaging and control of ferromagnetism in LaMnO3/SrTiO3 heterostructures. Science 349, 716-719 (2015).
[2] Allen Jian Yang, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu, Jun Xu, Ting Yu, Peng Gao, Qihua Xiong, and X. Renshaw Wang , Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors. Nature Electronics 5, 233-240 (2022).
[3] Allen Jian Yang, Liang Wu, Yanran Liu, Xinyu Zhang, Kun Han, Ying Huang, Shengyao Li, Xian Jun Loh, Qiang Zhu, Rui Su, Ce-Wen Nan, X. Renshaw Wang, Multifunctional magnetic oxide-MoS 2 heterostructures on silicon. Advanced Materials 35, 2302620 (2023).
About the speaker:
Renshaw Wang Xiao is currently a tenured associate professor at the School of Mathematics and Physics, Nanyang Technological University, Singapore. Since 2008, he has been committed to the exploration of electromagnetic properties of low-dimensional materials and the research of their prototype devices. In 2012, he obtained a Ph.D. from the National University of Singapore, and then joined the University of Twente in the Netherlands as a Rubicon Fellow, and began to explore the scanning and modulation of the magnetism of strongly correlated material systems. In 2014, as a postdoctoral researcher at the Massachusetts Institute of Technology, he studied the orbital and catalytic properties of the surface of strongly correlated systems. In September 2016, he joined Nanyang Technological University, Singapore as an assistant professor. He has published more than 100 articles in SCI journals, including one in Science and one in Nature electronics. He has presided over a number of Singapore funds. The homepage of the research group is http://renshawlab.com
